Abstract

In this project, I am advised by Hongyuan Li investigating a new method  using RuCl3 on top of graphene contacts to measure electrical transport properties of single-layer WS2 and MoSe2. In this experiment, we put multilayered RuCl3 with larger work function on top of graphene contacts. Thus, RuCl3 is electron-doped, while  graphene layer and TMDs are both hole-doped, making an interlayer charge transfer. Both contact area and gated area are hole-doped. The correlation between TMDs and graphene is no  longer metal with semiconductors . Hence, the graphene contact and the TMDs can be recognized  as an integrated hole-doped resulting reduction of the Schottky barrier which will largely increase the accuracy of electrical transport  measurement.